FDG6335N
Manufacturer:
On Semiconductor
Mfr.Part #:
FDG6335N
Datasheet:
Description:
MOSFETs SC-70-6 SMD/SMT N-Channel number of channels:2 300 mW 20 V Continuous Drain Current (ID):700 mA 1.4 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 300 mΩ |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 700 mA |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | 1.1 V |
| Number of Channels | 2 |
| Input capacitance | 113 pF |
| Continuous Drain Current (ID) | 700 mA |
| Rds On Max | 300 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 9 ns |
| Element Configuration | Dual |
| Fall Time | 7 ns |
| Rise Time | 7 ns |
| Gate Charge | 1.4 nC |
| Drain to Source Resistance | 300 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 600 mV |
| FET Type(Transistor Polarity) | N-Channel |
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